巨物挺进她的娇嫩H

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    1. 例: SP1231F|SP1233FL|SW6124|SW6106|CS8626
      DW3402

      Part NO:DW3402

      封裝:SOT23

      工作電壓:耐壓30V

      簡介:28m? @10V, 34m? @4.5V , 電流 5.1A
    2. 30V/5.1A N Channel Advanced Power MOSFET 

      Features

      ? Low RDS(on) @VGS=10V

      ? 3.3V Logic Level Control

      ? N Channel SOT23 Package

      ? Pb?Free, RoHS Compliant


      V(BR)DSS

      RDS(ON) Typ

      ID Max


      30V

      28m? @10V


      5.1A

      34m? @4.5V



      Applications

      ? DC-to-DC converters

      ? Power management in battery-driven portables

      ? Low-side load switch and charging switch for portable devices

      ? Switching circuits

      ? High-speed line driver



      Order Information

      Product

      Package

      Marking

      Packing

      DW3402

      SOT23

      A29T

      3000PCS/Reel


      Absolute Maximum Ratings

      Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


      Symbol

      Parameter

      Rating

      Unit

      Common Ratings (TA=25°C Unless Otherwise Noted)

      VGS

      Gate-Source Voltage

      ±16

      V

      V(BR)DSS

      Drain-Source Breakdown Voltage

      30

      V

      TJ

      Maximum Junction Temperature

      150

      °C

      TSTG

      Storage Temperature Range

      -50 to 150

      °C

      Mounted on Large Heat Sink

      IDM

      Pulse Drain Current Tested①

      TA =25°C

      20.4

      A

       

      ID

       

      Continuous Drain Current

      TA =25°C

      5.1

       

      A

      TA =70°C

      4

       

      PD

       

      Maximum Power Dissipation

      TA =25°C

      1.5

       

      W

      TA =70°C

      0.9

      Rq JA

      Thermal Resistance Junction-Ambient

      80

      °C/W



      Symbol

      Parameter

      Condition

      Min

      Typ

      Max

      Unit

      Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)

      V(BR)DSS

      Drain-Source Breakdown Voltage

      VGS=0V ID=250μA

      30

      --

      --

      V

       

      IDSS

       

      Zero Gate Voltage Drain Current(TA=25℃)

       

      VDS=30V, VGS=0V

       

      --

       

      --

       

      1

       

      μA

      Zero Gate Voltage Drain Current(TA=125℃)

      VDS=24V, VGS=0V

      --

      --

      100

      uA

      IGSS

      Gate-Body Leakage Current

      VGS=±16V, VDS=0V

      --

      --

      ±100

      nA

      VGS(TH)

      Gate Threshold Voltage

      VDS=VGS, ID=250μA

      0.5

      0.8

      1.2

      V

      RDS(ON)

      Drain-Source On-State Resistance②

      VGS=10V, ID=4A

      --

      28

      36

      m?

      RDS(ON)

      Drain-Source On-State Resistance②

       

      VGS=4.5V, ID=3A

       

      --

       

      34

       

      50

       

      m?

      RDS(ON)

      Drain-Source On-State Resistance②

       

      VGS=3.3V, ID=2A

       

      --

       

      40

       

      60

       

      m?

      RDS(ON)

      Drain-Source On-State Resistance②

       

      VGS=2.5V, ID=1A

       

      --

       

      55

       

      80

       

      m?

      Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)

      Ciss

      Input Capacitance

       

       

      VDS=15V, VGS=0V,

      f=1MHz

      --

      240

      --

      pF

      Coss

      Output Capacitance

      --

      35

      --

      pF

      Crss

      Reverse Transfer Capacitance

      --

      30

      --

      pF

      Qg

      Total Gate Charge

       

      VDS=15V ID=4A, VGS=4.5V

      --

      3.1

      --

      nC

      Qgs

      Gate Source Charge

      --

      0.4

      --

      nC

      Qgd

      Gate Drain Charge

      --

      1.3

      --

      nC

      Switching Characteristics

      td(on)

      Turn on Delay Time

       

       

      VDD=15V, ID=1A, RG=3.3?, VGS=10V

      --

      4.4

      --

      ns

      tr

      Turn on Rise Time

      --

      2.6

      --

      ns

      td(off)

      Turn Off Delay Time

      -

      25.5

      --

      ns

      tf

      Turn Off Fall Time

      --

      3.3

      --

      ns

      Source Drain Diode Characteristics

      ISD

      Source drain current(Body Diode)

      TA=25℃

      --

      --

      1.8

      A

      VSD

       

      Forward on voltage②

      Tj=25℃, ISD=4A,

      VGS=0V

       

      --

       

      0.85

       

      1.2

       

      V



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